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Title Investigation of current-voltage characteristics of Ni/GaN Schottky barrier diodes for potential hemt applications
Authors Kumar, Ashish
Vinayak, Seema
Singh, R.
ORCID
Keywords
Type Article
Date of Issue 2011
URI http://essuir.sumdu.edu.ua/handle/123456789/22021
Publisher Видавництво СумДУ
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Citation Kumar, A. Investigation of current-voltage characteristics of Ni/GaN Schottky barrier diodes for potential hemt applications [Текст] / A. Kumar, S. Vinayak, R. Singh // Journal of Nano- and Electronic Physics. — 2011. — Vol.3, № 1, Part IV : Proceedings of the International Symposium on Semiconductor Materials and Devices (ISSMD-2011), Vadodara, India, 28-30 January 2011. — P. 671-675.
Abstract In the present work, the I-V characteristics of Ni/GaN Schottky diodes have been studied. The Schottky diodes, having different sizes using Ni/Au and ohmic contacts using Ti/Al/Ni/Au were made on n-GaN. The GaN was epitaxially grown on c-plane sapphire by metal organic chemical vapor deposition (MOCVD) technique and had a thickness of about 3.7 μm. The calculated ideality factor and barrier height from current-voltage (I-V) characteristics (at 300 K) for two GaN Schottky diodes were close to ~1.3 and ~ 0.8 eV respectively. A high reverse leakage current in the order of 10 – 4A/cm2 (at – 1 V) was observed in both diodes. A careful analysis of forward bias I-V characteristics showed very high series resistance and calculation for ideality factor indicated presence of other current transport mechanism apart from thermionic model at room temperature. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/22021
Appears in Collections: Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

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Canada Canada
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