Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/30266
Or use following links to share this resource in social networks: Recommend this item
Title Simulation Based Analysis of Temperature Effect on Breakdown Voltage of Ion Implanted Co/n-Si Schottky Diode
Authors Kumar, Vibhor
Akhtar, J.
Singh, Kulwant
Maan, Anup Singh
ORCID
Keywords Schottky diode
Breakdown voltage
Ion implantation
Type Article
Date of Issue 2012
URI http://essuir.sumdu.edu.ua/handle/123456789/30266
Publisher Сумський державний університет
License
Citation Vibhor Kumar, J. Akhtar, Kulwant Singh, Anup Singh Maan, J. Nano- Electron. Phys. 4 No 4, 04009 (2012)
Abstract In semiconductor devices, breakdown voltage variation with temperature is a very significant study, since the reliability and performance of semiconductor devices especially depends upon the temperature. In this paper, the influence of temperature on breakdown characteristic of Ion Implanted edge terminated Co/n-Si Schottky Diode formed on n-Si epitaxial layer has been investigated by using SILVACO TCAD. It is also reported that not only resistive area present in close proximity to the edges of boron ion implanted Schottky diode are responsible for improvement in breakdown voltage but also the formation of PN junction near the edges, affect the breakdown voltage to a significant amount. The dopant concentration of epitaxial layer is 1 × 1015/cm3. The variation in reverse breakdown characteristics as a junction of temperature in the range of 300-1000 K is presented in this paper. A comparative study of breakdown voltages of Ion Implanted and as-prepared Schottky diode is also presented. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/30266
Appears in Collections: Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

Views

Algeria Algeria
1
Australia Australia
-1050308387
Belgium Belgium
80145
Canada Canada
1
China China
1172480344
France France
705964590
Germany Germany
2139216877
Greece Greece
1041920
Hong Kong SAR China Hong Kong SAR China
204001011
India India
2139216879
Iran Iran
2
Ireland Ireland
1591170311
Italy Italy
26535
Japan Japan
1377044588
Lithuania Lithuania
1
Mongolia Mongolia
1345968954
Netherlands Netherlands
2139216847
Norway Norway
2139216856
Pakistan Pakistan
2
Poland Poland
-201926823
Russia Russia
2139216904
Singapore Singapore
-1351898492
South Korea South Korea
705964587
Spain Spain
1
Sweden Sweden
1
Taiwan Taiwan
58838
Turkey Turkey
3
Ukraine Ukraine
2139216857
United Kingdom United Kingdom
-201926825
United States United States
1043123741
Unknown Country Unknown Country
2139216861
Uzbekistan Uzbekistan
1
Vietnam Vietnam
1041922

Downloads

China China
204001012
Egypt Egypt
1
France France
1
Germany Germany
2
Hong Kong SAR China Hong Kong SAR China
1
India India
111479
Iran Iran
192559
Italy Italy
1591170310
Lithuania Lithuania
1
Morocco Morocco
142280
Netherlands Netherlands
3962062
Russia Russia
2
Singapore Singapore
1
Ukraine Ukraine
93837
United Kingdom United Kingdom
162435
United States United States
1043123742
Unknown Country Unknown Country
128
Vietnam Vietnam
1

Files

File Size Format Downloads
Kumar V._Simulation.pdf 299,27 kB Adobe PDF -1452007442

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.