Showing results 1 to 5 of 5
| Issue Year | Title | Author(s) | Type | Views | Downloads |
|---|---|---|---|---|---|
| 2022 | An Analytical Model for the Depletion Region Width and Threshold Voltage of a Parallel Gated Junctionless Field Effect Transistor | Raibaruah, A.K.; Sarma, K.C.D. | Article | 189346070 | 241132366 |
| 2021 | Effect of ZrO2 Dielectric over the DC Characteristics and Leakage Suppression in AlGaN/InGaN/GaN DH MOS-HEMT | Sandeep, V.; Charles Pravin, J. | Article | -1207952562 | 977327385 |
| 2020 | Numerical Simulation of FinFET Transistors Parameters | Buryk, І.P.; Golovnia, A.O.; Ivashchenko, M.M.; Odnodvorets, Larysa Valentynivna | Article | 1239670978 | 501358175 |
| 2024 | A Simulation Study on the Performance of Double Gate Junctionless Field Effect Transistor for Doping Concentration Variation | Saikia, P.; Raibaruah, A.K.; Sarma, K.C.D. | Article | 2 | 0 |
| 2009 | Влияние типа аниона электролита на морфологию пористого InP, полученого методом электролитического травления | Сычикова, Я.А.; Кидалов, В.В.; Сукач, Г.А. | Article | -2069843006 | -2061847469 |