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Issue Year | Title | Author(s) | Type | Views | Downloads |
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2021 | Utility of a Reverse Double-drift Structure for Fabricating GaN IMPATT Diode Operating in the Terahertz Regime | Sahanowaj, Khan; Rishav, Dutta; Aritra, Acharyya; Arindam, Biswas; Hiroshi, Inokawa; Rudra, Sankar Dhar | Article | 2928330 | 8118195 |