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| Issue Year | Title | Author(s) | Type | Views | Downloads |
|---|---|---|---|---|---|
| 2024 | Effect of Aluminum (Al: 0, 1, 2 and 3 wt.%) Doping on Electrical Properties of ZnO:Al/p-Si Heterojunction for Optoelectronic Applications | Bouacheria, M.A.; Djelloul, A.; Benharrat, L.; Adnane, M. | Article | 2420 | 1309 |