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Title | Nanostructured Al doped Sn02 films grown onto ITO substrate via spray pyrolysis route |
Authors |
Benhaliliba, M.
Benouis, C.E. Ocak, Y.S. |
ORCID | |
Keywords |
Al doped tin oxide альлегированного оксида олова альлегірованного оксиду олова |
Type | Conference Papers |
Date of Issue | 2011 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/20530 |
Publisher | Видавництво СумДУ |
License | Copyright not evaluated |
Citation | Benhaliliba, M. Nanostructured Al doped Sn02 films grown onto ITO substrate via spray pyrolysis route [Текст] / M. Benhaliliba, C.E. Benouis, Y.S. Ocak // Nanomaterials: applications & properties. Proceedings : 1-st International conference, Alushta, Crimea, 27-30 Semptember 2011 / Edited by: A. Pogrebnjak, T. Lyutyy, S. Protsenko. — Sumy : Sumy State University, 2011. — V.1, P.ІІ. — C. 272-276. |
Abstract |
We report on nanostructured films of Al doped tin oxide grown by facile spray pyrolysis route, and their physical properties are investigated. The sprayed films are grown onto ITO substrate at 300°C from (SnCl4, 5H2O)as precursor. The content of Al
is kept at 3 % in the solution. Structural, optical, electrical and surface properties are investigated. X-rays pattern reveals polycrystalline structure and SnO2 phase occurence.
The visible transmitance exceeds 85%, the band gap is 3.7 eV.Nanotips are observed by 3D atomic force microscope (AFM) picture. The films exhibits very low resistivity found to be 9.85 10-5.cm, a high electron concentration around 1021cm-3, and low mobility 20 cm2/Vs.
When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/20530 |
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