Thermal reversible breakdown and resistivityswitching in hafnium dioxide

Danilyuk, M.A.; Migas, D.B.; Danilyuk, A.L.; Borisenko, V.E.; Xing Wu,; Raghavan Naga,; Kin-Leong Pey,

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Title	Thermal reversible breakdown and resistivityswitching in hafnium dioxide
Authors	Danilyuk, M.A. Migas, D.B. Danilyuk, A.L. Borisenko, V.E. Xing Wu, Raghavan Naga, Kin-Leong Pey,
ORCID
Keywords	hafnium dioxide thermal reversible breakdown conductive filament
Type	Conference Papers
Date of Issue	2011
URI	http://essuir.sumdu.edu.ua/handle/123456789/20559
Publisher	Sumy State University
License	Copyright not evaluated
Citation	Thermal reversible breakdown and resistivityswitching in hafnium dioxide [Текст] / M. Danilyuk, D. Migas, A. Danilyuk et al. // Nanomaterials: applications & properties. Proceedings : 1-st International conference, Alushta, Crimea, 27-30 Semptember 2011 / Edited by: A. Pogrebnjak, T. Lyutyy, S. Protsenko. - Sumy : Sumy State University, 2011. - V.2, P.². - C. 20-23.
Abstract	HfO2 nanostructures are currently considered to be very promising for different applications including gate oxides in Si transistors and emerging nonvolatile memory cells such as resistive random access memory (RRAM). For RRAM development a clear understanding of switching mechanisms from a HRS to a LRS is demanding. Several models were proposed to explain the switching effect [1-3], however, they did not cover comprehensively experimental observations. It is experimentally shown by means of high resolution transmission electron microscopy that formation of CFs with diameters of 30-50 nm in HfO2 occurred by an electrical pretreatment [2]. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/20559
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