Many body effects on the transport properties of a doped nano device

Modarresi, M.; Roknabadi, M.R.; Shahtahmasbi, N.; Mirhabibi, M.

Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/20568

Or use following links to share this resource in social networks: Recommend this item

Title	Many body effects on the transport properties of a doped nano device
Authors	Modarresi, M. Roknabadi, M.R. Shahtahmasbi, N. Mirhabibi, M.
ORCID
Keywords	nanocluster doping many body theory
Type	Conference Papers
Date of Issue	2011
URI	http://essuir.sumdu.edu.ua/handle/123456789/20568
Publisher	Sumy State University
License	Copyright not evaluated
Citation	Many body effects on the transport properties of a doped nano device [Òåêñò] / M. Modarresi, M. R. Roknabadi, N. Shahtahmasbi, M. Mirhabibi // Nanomaterials: applications & properties. Proceedings : 1-st International conference, Alushta, Crimea, 27-30 Semptember 2011 / Edited by: A. Pogrebnjak, T. Lyutyy, S. Protsenko. - Sumy : Sumy State University, 2011. - V.2, P.². - C. 24-29.
Abstract	In this article, we study the effect of electron-electron interaction in a doped nano cluster sandwich between two electrodes. The Hamiltonian of the cluster is written in the tight-binding model and electrodes are described in the wide-band approximation. The GW approximation has been used for the calculation of the exchange-correlation term in the cluster region. Our results showed that in the presence of the electronelectron interaction the transmittance gap increases and current decreases. Also, in a doped nano structure the transmission decreases and many body effect becomes more important. By considering the exchange-correlation in a doped nano cluster in the GW approximation the transmission and current decrease drastically. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/20568
Appears in Collections:	Наукові видання (ЕлІТ)