Fermi level of carriers in the volume filling defects structure based on heat-resistant metals

Abstract

The volume filling defects structure based on metals are widely used in modern nan- otechnology, especially when creating high temperature sensors and structural elements based on metal foams [1]. The development of contactless and nondestructive methods for diagnosis and test control parameters of multiply connected matrix base material is a very important and interesting aspect of the application [2]. In a heat-resistant metal with the volume filling defects (VFD) (micro- and nanopores with complex topologies and sizes, see. Figure 1) it is primarily its strength and electrical and physical characteristics. Almost all rapid methods of such measurements are based on both electrical measurements data and on fundamental functional relationships establishing of the microstructure parameters and the dispersion medium carriers [3]. The influence of a disordered set of volume filling defects (VFD) (micro- and nano-pores of complex topology and various sizes, Figure 1.) is the unsolved problem on the electronic properties of the micro heterogeneous materials theory. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/20600