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Title | Chemo-emf in the silicon solar cell exposed to low-energy hydrogen atoms |
Authors |
Styrov, V.V.
Simchenko, S.V. Golotyuk, V.N. |
ORCID | |
Keywords |
nanostructures energy conversion p-n junction |
Type | Conference Papers |
Date of Issue | 2011 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/20602 |
Publisher | Sumy State University |
License | Copyright not evaluated |
Citation | Styrov, V.V. Chemo-emf in the silicon solar cell exposed to low-energy hydrogen atoms [Текст] / V. V. Styrov, S. V. Simchenko, V. N. Golotyuk // Nanomaterials: applications & properties. Proceedings : 1-st International conference, Alushta, Crimea, 27-30 Semptember 2011 / Edited by: A. Pogrebnjak, T. Lyutyy, S. Protsenko. — Sumy : Sumy State University, 2011. — V.2, P.І. — C. 85-91. |
Abstract |
A new reactive gas-semiconductor system is experimentally found and examined
for the electron-hole pairs (e-h pairs) generation in the semiconductor due to exoergicty
of a surface chemical reaction. This system is “atomic hydrogen-crystalline silicon”. The
p-n silicon homojunction was used to produce chemo-emf and chemicurrent in the semi-
conductor system due to e-h pairs creation. The ideal geometry of the semiconductor
system would require the top semiconductor layer be of a nanosized thickness since only
the upper layer of the semiconductor is involved in chemical excitation. To make the
beginning of a research we howere harnessed the commercial silicon solar cell fabricat-
ed with the certain technological changes to have a bare semiconductor surface. A spe-
cial procedure was worked out to prepare the silicon surface free of the blocking layer of
silicon oxide.
The chemo-emf in the open circuit up to a few mV and the short circuit chemicur-
rent up to the record 700 nA were achieved that are the promising magnitudes to pave a
way for direct chemical energy to electrical energy conversion by semiconductor sys-
tems.
When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/20602 |
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