A structure and physical properties of Ni films in metastabile ststes

Abstract

There are presented the results of investigations of the influence of deposition rate and pressure of orifice gas on the structure, physical properties and thermal stability of nickel films obtained by the modified method of the three-electrode ion-plasmous sputtering (technique IPS). X-ray analysis and estimation of the size (L) of coherent-scattering regions (CSR)showed that in the as-deposited films which obtained with low energy of sputtered atoms and low deposition rate (~ 85 pm/s) there is formed a mixture of FCC Ni (L = 5 nm), traces of HCP nickel (L = 9 nm) and oxide of nickel NiO. Increase of energy of sputtered atoms by a decrease of pressure of orifice gas from 120 to 53 or 16 mPa leads to the formation at as-deposited films a mixture of phases FCC nickel and traces of oxides. Moreover, almost double increase of deposition rate leads to an increase the size of the CSR on ~20%. The heating of films of Ni with a mixture of FCC and HCP phases to 300-320 °C results in transformation of HCP in FCC. Freshly deposited films with the structure of FCC Ni are undergoing structural changes at heating above 350-450. These changes are linked obviously with the recrystallization. The size of the CSR for FCC Ni is increased almost in 2 times after heating. It is shown that energy of activating (EA) calculated by the method of Kissinger in the case of disintegration of HCP Ni exceeded from EA of beginning of recrystallization almost in three times and attains ~21000 K. In addition, it’s shown that increase of deposition rate brings to rise of activation energy of beginning recrystallization and indicates the formation of more stable structure in the films. Analysis of the demagnetization curves of the films of nickel showed anisotropy of magnetic properties. Hysteresis only is detected in a parallel field to the film of Ni. The coercive force does not exceed 200 A/m. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/20782