Effects of annealing regims on the structural and optical properties of inas and gasb nanocryctals created by ion-beam synthesis in Si matrix

Abstract

We have studied the ion-beam synthesis of InAs and GaSb nanocrystals in Si by high-fluence implantation of (As+In) and (Ga+Sb) ions followed a thermal annealing. In order to characterize the implanted samples Rutherford backscattering spectrometry in combination with the channelling (RBS/C), transmission electron microscopy (TEM), Raman spectrometry (RS) and low-temperature photoluminescence (PL) techniques were employed. It was demonstrated that by introducing getter, varying the ion implantation temperature, ion fluences and post-implantation annealing duration and temperature it is possible to form InAs and GaSb nanocrystals in the range of sizes of (2 – 80) nm and create different types of secondary defects distribution. RS results confirm the crystalline state of the clusters in the silicon matrix after high-fluence implantation of heavy (As+In) and (Ga+Sb) ions. Significant redistribution of implanted species has been revealed after “hot” implantation and post-implantation annealing. We have suggested that it is caused by non-equilibrium diffusion. A broad band in the spectral region of 0.7 – 1.1 eV is detected in the photoluminescence spectra of the samples. The nature of this PL band is discussed.We have studied the ion-beam synthesis of InAs and GaSb nanocrystals in Si by high-fluence implantation of (As+In) and (Ga+Sb) ions followed a thermal annealing. In order to characterize the implanted samples Rutherford backscattering spectrometry in combination with the channelling (RBS/C), transmission electron microscopy (TEM), Raman spectrometry (RS) and low-temperature photoluminescence (PL) techniques were employed. It was demonstrated that by introducing getter, varying the ion implantation temperature, ion fluences and post-implantation annealing duration and temperature it is possible to form InAs and GaSb nanocrystals in the range of sizes of (2 – 80) nm and create different types of secondary defects distribution. RS results confirm the crystalline state of the clusters in the silicon matrix after high-fluence implantation of heavy (As+In) and (Ga+Sb) ions. Significant redistribution of implanted species has been revealed after “hot” implantation and post-implantation annealing. We have suggested that it is caused by non-equilibrium diffusion. A broad band in the spectral region of 0.7 – 1.1 eV is detected in the photoluminescence spectra of the samples. The nature of this PL band is discussed. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/20838