Investigation of the epitaxial growth of AIIIBV-N heterostructures for solar cell applications

Beata S.,; Vincze A.,; Kovac J.,; Radziewicz D.,; Pucicki D.,; Serafinczuk J.,; Tlaczala M.,; Kudrawiec R.,

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Title	Investigation of the epitaxial growth of AIIIBV-N heterostructures for solar cell applications
Authors	Beata S., Vincze A., Kovac J., Radziewicz D., Pucicki D., Serafinczuk J., Tlaczala M., Kudrawiec R.,
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Type	Conference Papers
Date of Issue	2011
URI	http://essuir.sumdu.edu.ua/handle/123456789/20971
Publisher	Видавництво СумДУ
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Citation	Investigation of the epitaxial growth of AIIIBV-N heterostructures for solar cell applications [Текст] / S. Beata, D. Radziewicz, D. Pucicki et al. // Nanomaterials: applications & properties. Proceedings : 1-st International conference, Alushta, Crimea, 27-30 Semptember 2011 / Edited by: A. Pogrebnjak, T. Lyutyy, S. Protsenko. - Sumy : Sumy State University, 2011. - V.2, P.І. - C. 211-217.
Abstract	The InGaAsN/GaAs heterostructures proposed in 1996 by Kondow et al. have been successfully used in telecom laser constructions on GaAs substrate. Additionally, the InGaAsN with a bandgap of 1 eV are lattice matched to both GaAs and Ge for the nitrogen and indium contents of around 3 % and 9 %, respectively. These features make this semiconductor an ideal candidate for high-efficiency multijunction solar cells (MJSCs) based on the Ge/InGaAsN/GaAs/InGaP structure. The growth technology of the GaAsN alloy-based diluted nitrides is very difficult because of the large miscibility gap between GaAs and GaN. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/20971
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