Activation energy of polycrystalline silicon thin film transistor

Panwar, Alka; Chandra, Mahesh; Tyagi, B.P.

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Title	Activation energy of polycrystalline silicon thin film transistor
Authors	Panwar, Alka Chandra, Mahesh Tyagi, B.P.
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Keywords	энергии активации енергії активації activation energy поликремний полікремній polysilicon
Type	Article
Date of Issue	2011
URI	http://essuir.sumdu.edu.ua/handle/123456789/22010
Publisher	Видавництво СумДУ
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Citation	Panwar, A. Activation energy of polycrystalline silicon thin film transistor [Текст] / A. Panwar, M. Chandra, B.P. Tyagi // Journal of Nano- and Electronic Physics. — 2011. — Vol.3, № 1, Part IV : Proceedings of the International Symposium on Semiconductor Materials and Devices (ISSMD-2011), Vadodara, India, 28-30 January 2011. — P. 667-670.
Abstract	The activation energy of a poly-Si thin film transistor is observed to be influenced by the grain size, trap state density and the inversion layer thickness. The present study aims to investigate these parameters theoretically so as to explore optimum conditions for the working of a polycrystalline silicon thin film transistor. Our computations have revealed that the activation energy decreases with the increase of gate bias for all values of grain size, trap states density and the inversion layer thickness. These findings are compared with the experimental results. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/22010
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)