A study of Schottky barrier height inhomogeneity on In/p-Silicon

Modi, B.P.

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Title	A study of Schottky barrier height inhomogeneity on In/p-Silicon
Authors	Modi, B.P.
ORCID
Keywords	высота барьера Шоттки висота бар'єру Шоттки Schottky barrier height
Type	Article
Date of Issue	2011
URI	http://essuir.sumdu.edu.ua/handle/123456789/22033
Publisher	Видавництво СумДУ
License	Copyright not evaluated
Citation	Modi, B.P. A study of Schottky barrier height inhomogeneity on In/p-Silicon [Текст] / B.P. Modi // Journal of Nano- and Electronic Physics. — 2011. — Vol.3, № 1, Part IV : Proceedings of the International Symposium on Semiconductor Materials and Devices (ISSMD-2011), Vadodara, India, 28-30 January 2011. — P. 680-683.
Abstract	The current-voltage characteristics of In/p-Si Schottky diode measured over a temperature range of 120-360 K have been interpreted on the basis of thermionic emission across an inhomogenous Schottky contact. The experiment shows that the apparent barrier height be increases and ideality factor decreases from 0.26 eV and 6.36 at 120 K to 0.70 eV and 1.91 at 360 K respectively. The variation of effective Schottky barrier height and ideality factor with temperature has been explained considering lateral inhomogeneties at the metal-semiconductor interface. We have also discussed whether or not the junction current has been connected themionic field emission (TFE) mechanisms. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/22033
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)