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Title | Schottky contact of gallium on p-type silicon |
Authors |
Modi, B.P.
Patel, K.D. |
ORCID | |
Keywords |
тонкая пленка тонка плівка thin film межфазное напряжение міжфазнa напругу interfacial strain |
Type | Article |
Date of Issue | 2011 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/22035 |
Publisher | Видавництво СумДУ |
License | |
Citation | Modi, B.P. Schottky contact of gallium on p-type silicon [Текст] / B.P. Modi, K.D. Patel // Journal of Nano- and Electronic Physics. — 2011. — Vol.3, № 1, Part IV : Proceedings of the International Symposium on Semiconductor Materials and Devices (ISSMD-2011), Vadodara, India, 28-30 January 2011. — P. 684-690. |
Abstract |
The evolution of barrier at Schottky contact and its stabilization to value characterized by the barrier height and unambiguous measurement is still being curiously perused as they hold the key control and manufacture of tailor made Schottky devices for a host of existing and potential for future applications in
electronics, optoelectronics and microwave devices. In this context, gallium – silicon Schottky diode has been fabricated and analyzed.
When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/22035 |
Appears in Collections: |
Журнал нано- та електронної фізики (Journal of nano- and electronic physics) |
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File | Size | Format | Downloads |
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Modi.pdf | 205.09 kB | Adobe PDF | -858875550 |
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