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Title Schottky contact of gallium on p-type silicon
Authors Modi, B.P.
Patel, K.D.
ORCID
Keywords тонкая пленка
тонка плівка
thin film
межфазное напряжение
міжфазнa напругу
interfacial strain
Type Article
Date of Issue 2011
URI http://essuir.sumdu.edu.ua/handle/123456789/22035
Publisher Видавництво СумДУ
License
Citation Modi, B.P. Schottky contact of gallium on p-type silicon [Текст] / B.P. Modi, K.D. Patel // Journal of Nano- and Electronic Physics. — 2011. — Vol.3, № 1, Part IV : Proceedings of the International Symposium on Semiconductor Materials and Devices (ISSMD-2011), Vadodara, India, 28-30 January 2011. — P. 684-690.
Abstract The evolution of barrier at Schottky contact and its stabilization to value characterized by the barrier height and unambiguous measurement is still being curiously perused as they hold the key control and manufacture of tailor made Schottky devices for a host of existing and potential for future applications in electronics, optoelectronics and microwave devices. In this context, gallium – silicon Schottky diode has been fabricated and analyzed. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/22035
Appears in Collections: Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

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