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Title Structural, optical, and dielectric properties of A[(Mg0.32Co0.02) Nb0.66]O3 semiconductor, where (A = Ba, Sr or Ca)
Authors Bishnoi, B.
Mehta, P.K.
Panchal, C.J.
Desai, M.S.
Kumar, R.
ORCID
Keywords x-ray diffraction
дифракции рентгеновских лучей
дифракції рентгенівських променів
dielectric properties
діелектричні властивості
диэлектрические свойства
Type Article
Date of Issue 2011
URI http://essuir.sumdu.edu.ua/handle/123456789/22061
Publisher Видавництво СумДУ
License
Citation Structural, optical, and dielectric properties of A[(Mg0.32Co0.02) Nb0.66]O3 semiconductor, where (A = Ba, Sr or Ca) [Текст] / B. Bishnoi, P.K. Mehta, C.J. Panchal et al. // Journal of Nano- and Electronic Physics. — 2011. — Vol.3, № 1, Part IV : Proceedings of the International Symposium on Semiconductor Materials and Devices (ISSMD-2011), Vadodara, India, 28-30 January 2011. — P. 698-708.
Abstract Structural optical and dielectric properties of single phase A[(Mg0.32Co0.02) Nb0.66]O3, where A = Ba, Sr, or Ca, compounds were studied in the temperature range from room temperature (293 K) to 458 K. The X-ray diffraction revealed that the Ba[(Mg0.32Co0.02)Nb0.66]O3 [BMCN] compounds exhibit hexagonal symmetry whereas Sr[(Mg0.32Co0.02)Nb0.66]O3 [SMCN] and Ca[(Mg0.32Co0.02)Nb0.66]O3 [CMCN] compounds exhibit monoclinic symmetry. The replacement of Barium (r = 1.61 Å) by smaller ions like Strontium (r = 1.44 Å) or Calcium (r = 1.34 Å) in the polar dielectric Ba[(Mg0.32Co0.02) Nb0.66]O3 introduces the relaxation phenomenon and a gradual increase in the transition temperature maximum (Tm). The ac conductivity, as determined from the dielectric data, as a function of temperature and frequency, reveals the crossover from small polaron tunneling (SPT) to correlated barrier hopping (CBH) type conduction at » 370 K. The activation energy of the non-Debye type process evaluated both from the electric modulus and the conductivity data are nearly identical suggesting similarity in the hopping mechanism. The band gap of these materials lies in the range of narrow to wide band semi conductors. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/22061
Appears in Collections: Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

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China China
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