Metal-semiconductor field-effect transistors fabricated using DVT grown n-MoSe2 crystals with Cu-Schottky gates

Sumesh, C.K.; Patel, K.D.; Pathak, V.M.; Srivastava, R.

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Title	Metal-semiconductor field-effect transistors fabricated using DVT grown n-MoSe2 crystals with Cu-Schottky gates
Authors	Sumesh, C.K. Patel, K.D. Pathak, V.M. Srivastava, R.
ORCID
Keywords	омический контакт омічний контакт ohmic contact
Type	Article
Date of Issue	2011
URI	http://essuir.sumdu.edu.ua/handle/123456789/22071
Publisher	Видавництво СумДУ
License	Copyright not evaluated
Citation	Metal-semiconductor field-effect transistors fabricated using DVT grown n-MoSe2 crystals with Cu-Schottky gates [Текст] / C.K. Sumesh, K.D. Patel, V.M. Pathak, R. Srivastava // Journal of Nano- and Electronic Physics. — 2011. — Vol.3, № 1, Part IV : Proceedings of the International Symposium on Semiconductor Materials and Devices (ISSMD-2011), Vadodara, India, 28-30 January 2011. — P. 709-713.
Abstract	Metal-semiconductor field-effect transistors (MESFETs) based on DVT grown MoSe2 crystals and Cu Schottky gate have been fabricated and studied. When Schottky gate voltage (Vgs) changes from 0 to 10 V, the source-drain current (Ids) increases exponentially with Vgs and the conductance shows a drastic increase with positive Vgs. The fabricated n-MoSe2 MESFET have a saturated current level of about 100 mA and maximum transconductance of about 53 mA/V. Their results suggest a way of fabricating MESFETs from layered metal dichalcogenide semiconducting materials. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/22071
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)