Strategic review of arsenide, phosphide and nitride mosfets

Gourab, Dutta; Palash, Das; Partha, Mukherjee; Dhrubes, Biswas

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Title	Strategic review of arsenide, phosphide and nitride mosfets
Authors	Gourab, Dutta Palash, Das Partha, Mukherjee Dhrubes, Biswas
ORCID
Keywords	review огляд обзор фосфид фосфід phosphide
Type	Article
Date of Issue	2011
URI	http://essuir.sumdu.edu.ua/handle/123456789/22080
Publisher	Видавництво СумДУ
License	Copyright not evaluated
Citation	Strategic review of arsenide, phosphide and nitride mosfets [Текст] / D. Gourab, D. Palash, M. Partha, B. Dhrubes // Journal of Nano- and Electronic Physics. — 2011. — Vol.3, № 1, Part IV : Proceedings of the International Symposium on Semiconductor Materials and Devices (ISSMD-2011), Vadodara, India, 28-30 January 2011. — P. 728-740.
Abstract	Metal oxide semiconductor field effect transistor used as an amplifier and switch uses Si primarily as a channel material for its very stable oxide SiO2. In-spite of many advantages there are some restrictions for Si MOS, so the world is approaching towards compound semiconductor for higher frequency and current. The development of compound semiconductor metal oxide semiconductor is also facing critical problems due to the lack of availability of proper gate oxide material. Research is being conducted on arsenide and phosphide metal oxide semiconductor field effect transistor. Nitride channel MOS are in focus due to their high band gap, high current and high temperature uses. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/22080
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)