Simulation of CIGS thin film solar cells using AMPS-1D

Ray, J.R.; Panchal, C.J.; Desai, M.S.; Trivedi, U.B.

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Title	Simulation of CIGS thin film solar cells using AMPS-1D
Authors	Ray, J.R. Panchal, C.J. Desai, M.S. Trivedi, U.B.
ORCID
Keywords	cigs thin film тонкая пленка CIGS тонка плівка CIGS conversion efficiency ефективність перетворення эффективность преобразования
Type	Article
Date of Issue	2011
URI	http://essuir.sumdu.edu.ua/handle/123456789/22096
Publisher	Видавництво СумДУ
License	Copyright not evaluated
Citation	Simulation of CIGS thin film solar cells using AMPS-1D [Текст] / J.R. Ray, C.J. Panchal, M.S. Desai, U.B. Trivedi // Journal of Nano- and Electronic Physics. — 2011. — Vol.3, № 1, Part IV : Proceedings of the International Symposium on Semiconductor Materials and Devices (ISSMD-2011), Vadodara, India, 28-30 January 2011. — P. 747-754.
Abstract	The solar cell structure based on copper indium gallium diselenide (CIGS) as the absorber layer, cadmium sulfide (CdS) as a buffer layer un-doped (i) and Aluminium (Al) doped zinc oxide (ZnO) as a window layer was simulated using the one dimensional simulation program called analysis of microelectronic and photonic structures (AMPS-1D). In the simulation, the thickness of CIGS layer was varied from 300 to 3000 nm. The rest of layer’s thicknesses were kept constant, viz. 60 nm for CdS, and 80 nm and 500 nm for i- and Al-ZnO, respectively. By varying thickness of CIGS layer the simulated device performance was demonstrate in the form of current-voltage (I-V) characteristics and quantum efficiency (QE). When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/22096
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)