Temperature dependent I-V characteristics of Ag/p-Sn0.2Se0.8 thin film Schottky barrier diode

Patel, K.K.; Patel, M.; Patel, K.D.; Solanki, G.K.; Pathak, V.M.; Srivastava, R.

Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/22122

Or use following links to share this resource in social networks: Recommend this item

Title	Temperature dependent I-V characteristics of Ag/p-Sn0.2Se0.8 thin film Schottky barrier diode
Authors	Patel, K.K. Patel, M. Patel, K.D. Solanki, G.K. Pathak, V.M. Srivastava, R.
ORCID
Keywords	Шоттки диод Шоттки діод Schottky diode barrier height висота бар'єру высота барьера
Type	Article
Date of Issue	2011
URI	http://essuir.sumdu.edu.ua/handle/123456789/22122
Publisher	Видавництво СумДУ
License	Copyright not evaluated
Citation	Temperature dependent I-V characteristics of Ag/p-Sn0.2Se0.8 thin film Schottky barrier diode [Текст] / K.K. Patel, M. Patel, K.D. Patel et al. // Journal of Nano- and Electronic Physics. — 2011. — Vol.3, № 1, Part IV : Proceedings of the International Symposium on Semiconductor Materials and Devices (ISSMD-2011), Vadodara, India, 28-30 January 2011. — P. 783-786.
Abstract	Ag/p-Sn0.2Se0.8 Schottky barrier diodes have been fabricated and characterized by the current-voltage (I-V) technique as a function of temperature in the range of 303 K to 403 K. The forward bias characteristics have been analyzed on the basis of thermionic emission (TE) theory and the characteristic parameters of Schottky barrier diode such as barrier height, ideality factor and series resistance have been determined. The conventional Richardson plot was drawn and the value of Richardson constant was determined using the intersection of Ln(I0/T2) vs 1000/T. It is found to be around 15 Acm – 2K – 2 which is closer to the reported value for SnSe. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/22122
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)