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Title | Design optimization of deflection caused after release of multilayer structural membrane of Symmetric Toggle Switch |
Authors |
Maninder, K.
Sharma, Akshdeep Bansal, Deepak Kumar, Dinesh Singh, S. Rangra, K.J. |
ORCID | |
Keywords |
высокочастотный микроэлектромеханический переключатель високочастотний мікроелектромеханічний перемикач Rf mems switch вносимые потери внесені втрати insertion loss |
Type | Article |
Date of Issue | 2011 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/22123 |
Publisher | Видавництво СумДУ |
License | Copyright not evaluated |
Citation | Design optimization of deflection caused after release of multilayer structural membrane of Symmetric Toggle Switch [Текст] / K. Maninder, A. Sharma, D. Bansal et al. // Journal of Nano- and Electronic Physics. — 2011. — Vol.3, № 1, Part IV : Proceedings of the International Symposium on Semiconductor Materials and Devices (ISSMD-2011), Vadodara, India, 28-30 January 2011. — P. 787-791. |
Abstract |
This paper presents the optimization in deflection caused by the inbuilt stress generated in mechanical or movable membrane of Symmetric Toggle RF MEMS Switch (STS). The movable membrane of STS was initially fabricated with two different materials, i.e. Chrome and Gold. The simulated deflection at 70°C was 11.9
μm, and experimental deflection was 11-12 μm. We present a study of inbuilt deflection reduction in multimetal movable layers without change in actuation voltage of the switch. The design study was initially carried out on cantilevers and then on
structural membrane of STS. STS with proposed multilayer of Cr-Au-Au-Ti-Au has a simulated deflection of 0.56 μm at 70°C.
When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/22123 |
Appears in Collections: |
Журнал нано- та електронної фізики (Journal of nano- and electronic physics) |
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Maninder.pdf | 480.93 kB | Adobe PDF | 434038784 |
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