Design optimization of deflection caused after release of multilayer structural membrane of Symmetric Toggle Switch

Maninder, K.; Sharma, Akshdeep; Bansal, Deepak; Kumar, Dinesh; Singh, S.; Rangra, K.J.

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Title	Design optimization of deflection caused after release of multilayer structural membrane of Symmetric Toggle Switch
Authors	Maninder, K. Sharma, Akshdeep Bansal, Deepak Kumar, Dinesh Singh, S. Rangra, K.J.
ORCID
Keywords	высокочастотный микроэлектромеханический переключатель високочастотний мікроелектромеханічний перемикач Rf mems switch вносимые потери внесені втрати insertion loss
Type	Article
Date of Issue	2011
URI	http://essuir.sumdu.edu.ua/handle/123456789/22123
Publisher	Видавництво СумДУ
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Citation	Design optimization of deflection caused after release of multilayer structural membrane of Symmetric Toggle Switch [Текст] / K. Maninder, A. Sharma, D. Bansal et al. // Journal of Nano- and Electronic Physics. — 2011. — Vol.3, № 1, Part IV : Proceedings of the International Symposium on Semiconductor Materials and Devices (ISSMD-2011), Vadodara, India, 28-30 January 2011. — P. 787-791.
Abstract	This paper presents the optimization in deflection caused by the inbuilt stress generated in mechanical or movable membrane of Symmetric Toggle RF MEMS Switch (STS). The movable membrane of STS was initially fabricated with two different materials, i.e. Chrome and Gold. The simulated deflection at 70°C was 11.9 μm, and experimental deflection was 11-12 μm. We present a study of inbuilt deflection reduction in multimetal movable layers without change in actuation voltage of the switch. The design study was initially carried out on cantilevers and then on structural membrane of STS. STS with proposed multilayer of Cr-Au-Au-Ti-Au has a simulated deflection of 0.56 μm at 70°C. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/22123
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)