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Title | Effect of series resistance and interface state density on electrical characteristics of Au/SiO2/n-GaN Schottky diodes |
Authors |
Siva, Protar Reddy M.
Prasanna, Laksmi B. Ashok, Kumar A. Rajagopal, V. Reddy |
ORCID | |
Keywords |
интерфейс плотности інтерфейс щільності interface densities |
Type | Article |
Date of Issue | 2011 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/22227 |
Publisher | Видавництво СумДУ |
License | Copyright not evaluated |
Citation | Effect of series resistance and interface state density on electrical characteristics of Au/SiO2/n-GaN Schottky diodes [Текст] / Pratap Reddy M. Siva, Lakshmi B. Prasanna, Kumar A. Ashok, Reddy V. Rajagopal // Journal of Nano- and Electronic Physics. — 2011. — Vol.3, № 1, Part IV : Proceedings of the International Symposium on Semiconductor Materials and Devices (ISSMD-2011), Vadodara, India, 28-30 January 2011. — P. 832-837. |
Abstract |
metal-insulator-semiconductor (MIS) Schottky diodes and compared with (Au/n-GaN)metal-semiconductor (MS) Schottky diode. The effect of SiO2 on the surface preparation of n-GaN (MIS) Schottky diode is analyzed. The extracted Schottky barrier
height and ideality factor of the MS Schottky diode is found to be 0.79 eV and 1.45 respectively. It is observed that the Schottky barrier height increases to 0.86 eV and
ideality factor decreases to 1.3 for MIS diode. The interface state density as determined by Terman’s method is found to be 3.79 × 1012 and 3.41 × 1010 cm - 2 eV - 1 for the MS and MIS Schottky diodes, respectively. In addition, the values of series resistance (Rs) are determined using Cheung’s method. The I - V characteristics confirmed that the distribution of Nss, Rs and interfacial layer are important parameters that influence the electrical characteristics of MIS Schottky diodes.
When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/22227 |
Appears in Collections: |
Журнал нано- та електронної фізики (Journal of nano- and electronic physics) |
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