Modeling of Threshold Voltage and Drain Current of Uniaxial Strained p-MOSFETs

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Title	Modeling of Threshold Voltage and Drain Current of Uniaxial Strained p-MOSFETs
Authors	Chaudhry, Amit Sangwan, Sonu Nath Roy, Jatindra
ORCID
Keywords	Mobility Strained–Si Numerical
Type	Article
Date of Issue	2011
URI	http://essuir.sumdu.edu.ua/handle/123456789/23714
Publisher	Видавництво СумДУ
License	Copyright not evaluated
Citation	Amit Chaudhry, Sonu Sangwan, Jatindra Nath Roy, J. Nano- Electron. Phys. 3 No4, 27 (2011)
Abstract	An analytical model describing the threshold voltage and drain current in strained-Si p-MOSFETs as a function of applied uniaxial strain applied at the gate has been developed in this paper. The uniaxial stress has been applied through the silicon nitride cap layer. The results show that the threshold voltage falls and drain current rises due to applied uniaxial strain. The results have also been compared with the experimentally reported results and show good agreement. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/23714
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)