The Annealing Effects of ZnO Thin Films on Characteristic Parameters of Au/ZnO Schottky Contacts on n-Si

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Title	The Annealing Effects of ZnO Thin Films on Characteristic Parameters of Au/ZnO Schottky Contacts on n-Si
Authors	Akkilic, K. Ocak, Y.S. Kilicoglu, T. Toprak, A.
ORCID
Keywords	ZnO Schottky contact DC sputtering Electrical properties
Type	Article
Date of Issue	2012
URI	http://essuir.sumdu.edu.ua/handle/123456789/24907
Publisher	Видавництво СумДУ
License	Copyright not evaluated
Citation	K. Akkilic, Y.S. Ocak, T. Kilicoglu, A. Toprak, J. Nano-Electron. Phys. 4 No 1, 01012 (2012)
Abstract	200 nm ZnO thin films have been grown on n type Silicon substrates by DC sputtering technique. One of the thin films has been annealed at 300 ºC for 45 minutes. The Au front contacts on ZnO thin films have been formed by evaporation of Au metal by means of shadow mask. It has been seen that the rectification ratio of Au/ZnO device obtained using annealed ZnO thin film is higher than the one obtained using unannealed ZnO thin film. The characteristic parameters of Au/ZnO junctions such as ideality factor, barrier height and series resistance obtained by current-voltage (I-V) measurements of the structures at room temperature and in dark have been compared with each others. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/24907
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)