High Second-Order Nonlinear Susceptibility Induced in GaN/AlxGa1 – xN Coupled Quantum Well for Infrared Photodectors Application

Elkadadra, A.; Abouelaoualim, D.; Oueriagli, A.; Outzourhit, A.

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Title	High Second-Order Nonlinear Susceptibility Induced in GaN/AlxGa1 – xN Coupled Quantum Well for Infrared Photodectors Application
Authors	Elkadadra, A. Abouelaoualim, D. Oueriagli, A. Outzourhit, A.
ORCID
Keywords	Second-harmonic generation Wurtzite quantum well Strain-induced piezoelectric Density matrix approach Numerov method
Type	Article
Date of Issue	2012
URI	http://essuir.sumdu.edu.ua/handle/123456789/27772
Publisher	Сумський державний університет
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Citation	A. Elkadadra, D. Abouelaoualim, A. Oueriagli, A. Outzourhit, J. Nano-Electron. Phys. 4 No 2, 02002 (2012)
Abstract	The second harmonic generation (SHG) of GaAs/AlxGa1 − xAs a wurtzite coupled quantum wells (CQWs) is studied theoretically for different widths of well, barrier and values Al concentration, taking into account the strain-induced piezoelectric (PZ) effects. The analytical expression of the SHG susceptibility is deduced by using the compact density matrix approach. The confined wave functions and energies of electrons GaN/AlxGA1 – x N are calculated in the effective-mass approximation, solving the Schrödinger equation by Numerov’s method using six order approximations for the derivatives. The calculated results also reveal that by adjusting the widths of well, the barrier and Al concentration respectively, a set of optimal structural parameters can be found for obtaining a strong SHG susceptibility. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/27772
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)