Please use this identifier to cite or link to this item:
http://essuir.sumdu.edu.ua/handle/123456789/27777
Or use following links to share this resource in social networks:
Tweet
Recommend this item
Title | Electrical Transport Characteristics and Deep Level Transient Spectroscopy of Ni/V/n-InP Schottky Barrier Diodes |
Authors |
Sankar Naik, S.
Rajagopal Reddy, V. |
ORCID | |
Keywords |
Ni/V/n-InP Schottky diode Temperature-dependent electrical properties Deep level defects DLTS measurements |
Type | Article |
Date of Issue | 2012 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/27777 |
Publisher | Сумський державний університет |
License | Copyright not evaluated |
Citation | S.Sankar Naik, V.Rajagopal Reddy, J. Nano-Electron. Phys. 4 No 2, 02006 (2012) |
Abstract |
We report on the temperature-dependent electrical characteristics and deep level transient spectroscopy (DLTS) of the Ni/V/n-InP Schottky diodes in the temperature range of 180-420 K. Current density - voltage (J-V) characteristics of these diodes have been analyzed on the basis of thermionic emission theory with Gaussian distribution model of barrier height. The calculated Schottky barrier height (bo) and ideality factor (n) of Ni/V Schottky contact is in the range of 0.39 eV and 2.36 at 180 K, and 0.69 eV and 1.27 at 420 K, respectively. It is observed that the zero-bias barrier height increases while ideality factor decreases with increasing temperature. A bo versus q/2kT plot is drawn to obtain evidence of a Gaussian distribution of the barrier heights, and values of = 0.95 eV and 0 = 128 eV for the mean barrier height and standard deviation. A modified Richardson plot gives (T=0)= 0.98 eV and Richardson constant (A*) = 7.068 A K – 2cm – 2. The discrepancy between Schottky barrier height (SBHs) estimated from J-V and C-V measurements is also discussed. Thus, it is concluded that the temperature dependence of J-V characteristics of the SBHs on n-InP can be explained on the basis of themionic emission mechanism with Gaussian distribution of the barrier heights. DLTS results showed that two deep levels are identified (E1 and E2) in as-grown sample having activation energies of 0.29 ± 0.01 and 0.69 ± 0.02 with capture cross-section 3.29 × 10 – 15 cm2 and 5.85 × 10 – 17 cm2 respectively.
When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/27777 |
Appears in Collections: |
Журнал нано- та електронної фізики (Journal of nano- and electronic physics) |
Views

211525446

18

1

59483860

1

87428

2

110481

1

1

1

518397197

87419

1036706968

2

1

1

4

84158

89141

-381654436

150368

13176422
Downloads

3365

1458244486

1

3

59483859

1

1

1

1

1

1050788342

3009160

-381654435

1458244486

1
Files
File | Size | Format | Downloads |
---|---|---|---|
jnep_2012_V4_02006.pdf | 626.29 kB | Adobe PDF | -646848023 |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.