Effect of Impurity Concentration on the Depth Profile of the Electric Field within Monolayer Thin Film

Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/27797

Or use following links to share this resource in social networks: Recommend this item

Title	Effect of Impurity Concentration on the Depth Profile of the Electric Field within Monolayer Thin Film
Authors	Habubi, N.F. Mishjil, Kh.A. Rashid, H.G.
ORCID
Keywords	Electric field intensity Matrix formulas Contamination sensitivity
Type	Article
Date of Issue	2012
URI	http://essuir.sumdu.edu.ua/handle/123456789/27797
Publisher	Сумський державний університет
License	Copyright not evaluated
Citation	N.F. Habubi, Kh.A. Mishjil, H.G. Rashid, J. Nano-Electron. Phys. 4 No 2, 24 (2012)
Abstract	The effect of impurity concentration ratios on the depth profile of electric field within monolayer film is presented. SnO2 monolayer thin film material was prepared and doped with Co using spray chemical pyrolysis. The concentration ratios of impurity were 1 %, 3 %, 5 % and 7 %. The analysis utilizes matrix formulas based on Abele's formulas from the calculation of reflectance and transmittance. Present study gives an information to contamination sensitivity in optical coating issue. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/27797
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)