A 2-D analytical threshold voltage model for symmetric double gate MOSFET's using green’s function

Garg, Anoop; Sinha, S.N.; Agarwal, R.P.

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Title	A 2-D analytical threshold voltage model for symmetric double gate MOSFET's using green’s function
Authors	Garg, Anoop Sinha, S.N. Agarwal, R.P.
ORCID
Keywords	green’s function minimum surface potential threshold voltage symmetric DG-mosfet two dimensional (2D) poisson equations and undoped or lightly doped
Type	Article
Date of Issue	2011
URI	http://essuir.sumdu.edu.ua/handle/123456789/27880
Publisher	Видавництво СумДУ
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Citation	Garg, Anoop A 2-D analytical threshold voltage model for symmetric double gate MOSFET's using green’s function [Текст] / A. Garg, S.N. Sinha, R.P. Agarwal // Journal of Nano- and Electronic Physics. — 2011. — Vol. 3, № 1, Part V : Proceedings of the International Symposium on Semiconductor Materials and Devices (ISSMD-2011), Vadodara, India, 28-30 January 2011. — P. 894-902.
Abstract	We propose a new two dimensional (2D) analytical solution of Threshold Voltage for undoped (or lightly doped) Double Gate MOSFETs. We have used Green’s function technique to solve the 2D Poisson equation, and derived the threshold voltage model using minimum surface potential concept. This model is assumed uniform doping profile in Si region. The proposed model compared with existing literature and experimental data and we obtain excellent agreements with previous techniques. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/27880
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)