Absorption and luminescence of hydrogen and oxygen passivated silicon quantum dots

Rajesh, C.; Mahamuni, S.; Ghaisas, S.V.

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Title	Absorption and luminescence of hydrogen and oxygen passivated silicon quantum dots
Authors	Rajesh, C. Mahamuni, S. Ghaisas, S.V.
ORCID
Keywords	IV semiconductor photoluminescence UV-VIS absorption nanoparticles photovoltaics
Type	Article
Date of Issue	2011
URI	http://essuir.sumdu.edu.ua/handle/123456789/27881
Publisher	Видавництво СумДУ
License	Copyright not evaluated
Citation	Rajesh, C. Absorption and luminescence of hydrogen and oxygen passivated silicon quantum dots [Текст] / C. Rajesh, S. Mahamuni, S.V. Ghaisas // Journal of Nano- and Electronic Physics. — 2011. — Vol. 3, № 1, Part V : Proceedings of the International Symposium on Semiconductor Materials and Devices (ISSMD-2011), Vadodara, India, 28-30 January 2011. — P. 903-909.
Abstract	Silicon (Si) quantum dots (QDs) passivated with oxygen and hydrogen of size 1 nm in diameter are prepared by wet chemical route and electrochemical route respectively. The optical measurements reveal the strong absorption feature around 4.7 eV and weak absorption at 3.4 eV for oxygen passivated Si QDs. Hydrogen passivated Si QDs of the same size show absorption at 4.9 eV. Both the oxygen and hydrogen passivated Si QDs show broad luminescence around 3.9 and 3.8 eV. Films of these QDs, when coated on crystalline silicon solar cells, show an increase in the efficiency of the solar cell by 12 %. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/27881
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)