Surface states and photoluminescence from porous silicon

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Title	Surface states and photoluminescence from porous silicon
Authors	Nazrul, Islam Md Kumar, Satyendra
ORCID
Keywords	porous silicon photoluminescence quantum confinement surface states raman scattering
Type	Article
Date of Issue	2011
URI	http://essuir.sumdu.edu.ua/handle/123456789/27882
Publisher	Видавництво СумДУ
License	Copyright not evaluated
Citation	Nazrul, Islam Md. Surface states and photoluminescence from porous silicon [Текст] / Islam Md. Nazrul, S. Kumar // Journal of Nano- and Electronic Physics. — 2011. — Vol. 3, № 1, Part V : Proceedings of the International Symposium on Semiconductor Materials and Devices (ISSMD-2011), Vadodara, India, 28-30 January 2011. — P. 910-913.
Abstract	Photoluminescence (PL) spectra of freshly electrochemically etched porous silicon layers anodized under various condition have been measured and analyzed according to quantum confinement (QC) model and surface state models. The results support the combination of QC and surface state models for visible PL from fresh PS layers. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/27882
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)