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Title Thermal annealing behaviour on electrical properties of Pd/Ru Schottky contacts on n-type GaN
Authors Nanda, Kumar Reddy N.
Rajagopal, Reddy V.
ORCID
Keywords schottky barrier diode
thermal annealing temperature
I-V and C-V characteristics
leakage current
barrier height
Type Article
Date of Issue 2011
URI http://essuir.sumdu.edu.ua/handle/123456789/27884
Publisher Видавництво СумДУ
License Copyright not evaluated
Citation Nanda, Kumar Reddy N. Thermal annealing behaviour on electrical properties of Pd/Ru Schottky contacts on n-type GaN [Текст] / Kumar Reddy N. Nanda, Reddy V. Rajagopal // Journal of Nano- and Electronic Physics. — 2011. — Vol. 3, № 1, Part V. - P. 921-925.
Abstract We have investigated the electrical properties of Pd/Ru Schottky contacts on n-GaN as a function of annealing temperature by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The Schottky barrier height of the as-deposited Pd/Ru contact is found to be 0.67 eV (I-V) and 0.79 eV (C-V), respectively. Measurements showed that the Schottky barrier height increased from 0.68 eV (I-V) and 0.80 eV (C-V) to 0.80 eV (I-V) and 0.96 eV (C-V) as the annealing temperature is varied from 200 °C to 300 °C. Upon annealing at 400 °C and 500 °C, the Schottky barrier height decreased to 0.73 eV (I-V) and 0.85 eV (C-V) and 0.72 eV (I-V) and 0.84 eV (C-V), respectively. It is noted that the barrier height further decreased to 0.59 eV (I-V) and 0.72 eV (C-V) when the contact is annealed at 600 °C. The change of Schottky barrier heights and ideality factors with annealing temperature may be due to the formation of interfacial compounds at the Ru/Pd/n-GaN interface. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/27884
Appears in Collections: Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

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