A doping dependent threshold voltage model of uniformly doped short-channel symmetric double-gate (DG) MOSFET’s

Tiwari, P.K.; Dubey, S.; Jit, S.

Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/27893

Or use following links to share this resource in social networks: Recommend this item

Title	A doping dependent threshold voltage model of uniformly doped short-channel symmetric double-gate (DG) MOSFET’s
Authors	Tiwari, P.K. Dubey, S. Jit, S.
ORCID
Keywords	DG MOSFET Short-channel effects Band gap narrowing Quantum mechanical effects Threshold voltage
Type	Article
Date of Issue	2011
URI	http://essuir.sumdu.edu.ua/handle/123456789/27893
Publisher	Видавництво СумДУ
License
Citation	P.K. Tiwari, S. Dubey, S. Jit, J. Nano- Electron. Phys. 3 No1, 963 (2011)
Abstract	The paper presents a doping dependent threshold voltage model for the short-channel double-gate (DG) MOSFETs. The channel potential has been determined by solving the two-dimensional (2D) Poisson’s equation using the parabolic potential approximation in the vertical direction of channel. Threshold voltage sensitivity on acceptor doping and device parameters is discussed in detail. The threshold voltage expression has been modified by incorporating the effects of band gap narrowing for highly doped DG MOSFETs. Quantum mechanical corrections have also been employed in the threshold voltage model. The theoretical results have been compared with the ATLASTM simulation results. The present model is found to be valid for acceptor doping variation from 1014 cm–3 to 5 × 1018cm–3. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/27893
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)