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Title | Analytical estimate of open-circuit voltage of a Schottky-barrier solar cell under high level injection |
Authors |
Mahala, Pramila
Behura, Sanjay Kumar Ray, A. |
ORCID | |
Keywords |
Schottky barrier solar cell High level injection Open circuit voltage Ohmic contact Surface recombination velocity |
Type | Article |
Date of Issue | 2011 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/27897 |
Publisher | Видавництво СумДУ |
License | Copyright not evaluated |
Citation | Pramila Mahala, Sanjay Kumar Behura, A. Ray, J. Nano- Electron. Phys. 3 No1, 979 (2011) |
Abstract |
The open-circuit voltage developed across a Schottky-Barrier (SB) solar cell was theoretically modeled to estimate it under high level injection conditions. An Open-circuit voltage (Voc) of 0.709 V was obtained for specific metal/n-Si SB solar cell. A substantial increase of 42.6 % in Voc was noticed while comparing our result with that previously calculated in low level injection conditions. Four different metals suitable for making Schottky contact with n-Si were investigated and calculated the variation of Voc with different values of doping concentrations in the semiconductor. The effect of surface recombination velocities (SRV) of charge carriers on Voc was also estimated at such high level injections.
When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/27897 |
Appears in Collections: |
Журнал нано- та електронної фізики (Journal of nano- and electronic physics) |
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Mahala.pdf | 364.17 kB | Adobe PDF | -244346019 |
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