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Title | Investigation of implantation-induced damage in indium phosphide for layer transfer applications |
Authors |
Dadwal, U.
Pareek, V. Scholz, R. Reiche, M. Chandra, S. Singh, R. |
ORCID | |
Keywords |
ion implantation damage TEM nanocracks nanobubbles |
Type | Article |
Date of Issue | 2011 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/27924 |
Publisher | Видавництво СумДУ |
License | |
Citation | U. Dadwal, V. Pareek, R. Scholz, et al., J. Nano- Electron. Phys. 3 No1, 1081 (2011) |
Abstract |
100 keV H+ and He+ ion implantation was performed in 300 µm thick (100) InP substrates at liquid nitrogen temperature with a constant fluence of 1 × 1017 cm–2. The surface morphology of the as-implanted InP samples was studied by optical microscopy. The implantation-induced damage was investigated by cross-sectional TEM, which revealed the formation of damage band in both cases near to the projected range of implanted ions. The formation of hydrogen-induced nanocracks and helium filled nanobubbles was observed in as-implanted InP samples.
When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/27924 |
Appears in Collections: |
Журнал нано- та електронної фізики (Journal of nano- and electronic physics) |
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