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Title Impact of annealing on CuInSe2 thin films and its Schottky interface
Authors Parihar, U.
Ray, J.R.
Kumar, N.
Sachdeva, R.
Padha, N.
Panchal, C.J.
ORCID
Keywords thermal evaporation
CIS thin film
vacuum annealing
structural
morphological
electrical characterization
Type Article
Date of Issue 2011
URI http://essuir.sumdu.edu.ua/handle/123456789/27928
Publisher Видавництво СумДУ
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Citation U. Parihar, J.R. Ray, N. Kumar, et al., J. Nano- Electron. Phys. 3 No1, 1086 (2011)
Abstract The room temperature current–voltage (I-V) characteristics of the Al/p-CuInSe2 Schottky Diodes fabricated on thermally evaporated CIS thin films, before and after annealing, were studied. Prior to their diode formation, the undertaken CIS thin films were compared on the basis of structural, morphological and electrical investigations. Wherein, annealed films showed an increase in the grain size and carrier concentration values while decrease in resistivity. I-V analysis of the Schottky diodes depicted decrease in the barrier heights and increase in ideality factors of those formed on annealed films. The diodes, thus, indicated the existence of barrier inhomogenity at the M-S interface. The annealed Schottky diodes also demonstrated better ideality factor values with increased thickness of CIS layer. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/27928
Appears in Collections: Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

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China China
41
France France
1
Germany Germany
242
India India
1573995361
Japan Japan
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Lithuania Lithuania
1
Singapore Singapore
1
South Korea South Korea
1
Tunisia Tunisia
1
Ukraine Ukraine
429974897
United Kingdom United Kingdom
1
United States United States
-1828508644
Unknown Country Unknown Country
-2057250663
Vietnam Vietnam
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