Investigations of surface morphology and chemical composition of Ag/ZnS/glassceramic thin-film structure

Kurbatov, Denys Ihorovych; Opanasiuk, Anatolii Serhiiovych; Денисенко, В.; Денисенко, В.; Denisenko, V.; Крамченков, А.; Крамченков, А.; Kramchenkov, А.; Захарець, M.; Захарец, M.; Zaharets, M.

Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/30133

Or use following links to share this resource in social networks: Recommend this item

Title	Investigations of surface morphology and chemical composition of Ag/ZnS/glassceramic thin-film structure
Authors	Kurbatov, Denys Ihorovych Opanasiuk, Anatolii Serhiiovych Денисенко, В. Денисенко, В. Denisenko, V. Крамченков, А. Крамченков, А. Kramchenkov, А. Захарець, M. Захарец, M. Zaharets, M.
ORCID	http://orcid.org/0000-0002-2754-6367 http://orcid.org/0000-0002-1888-3935
Keywords	zinc sulfide thin films surface morphology roughness Rutherford backscattering spectroscopy chemical composition
Type	Article
Date of Issue	2008
URI	http://essuir.sumdu.edu.ua/handle/123456789/30133
Publisher	V. Lashkaryov Institute of Semiconductor Physics
License	Copyright not evaluated
Citation	Kurbatov D. Investigations of surface morphology and chemical composition of Ag/ZnS/glassceramic thin-film structure [Текст] / D. Kurbatov, A. Opanasyuk, V. Denisenko, A. Kramchenkov, M. Zaharets // Semiconductor Physics, Quantum Electronics & Optoelectronics. – 2008. – V. 11 (3). – P. 252-256.
Abstract	The surface morphology and chemical composition of Ag/ZnS/glassceramic thin-film system obtained by close-spaced vacuum sublimation technique under different grow conditions were investigated. Examination of surface profile and morphology was performed by scanning electron and optical microscopy. Chemical composition was studied by Rutherford back scattering method. Results of morphology studies enabled to determine dependence of the growth mechanism, roughness Ra, grain size D of ZnS layers on the growth conditions. The researches of chemical composition allowed to determine the concentration of compound elements and impurities, deviation from stoichiometry and thickness distribution of chemical elements. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/30133
Appears in Collections:	Наукові видання (ЕлІТ)