Calculation of Fermi level location and point defect ensemble in CdTe single crystal and thin films

Kosiak, Volodymyr Volodymyrovych; Opanasiuk, Anatolii Serhiiovych

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Title	Calculation of Fermi level location and point defect ensemble in CdTe single crystal and thin films
Authors	Kosiak, Volodymyr Volodymyrovych Opanasiuk, Anatolii Serhiiovych
ORCID	http://orcid.org/0000-0002-1888-3935
Keywords	cadmium telluride point defects quasichemical formalism “ab initio” approach single crystals thin films
Type	Article
Date of Issue	2007
URI	http://essuir.sumdu.edu.ua/handle/123456789/30134
Publisher	V. Lashkaryov Institute of Semiconductor Physics
License	Copyright not evaluated
Citation	Kosyak, V.V. Calculation of Fermi level location and point defect ensemble in CdTe single crystal and thin films [Текст] / V.V. Kosyak, A.S. Opanasyuk // Semiconductor Physics, Quantum Electronics & Optoelectronics. – 2007. – V. 10 (3). – P. 95-107.
Abstract	With the use of expressions obtained from the “first principles”, the ensemble of point defects was calculated, and the location of a Fermi level in undoped cadmium telluride single crystals and thin films depending on physico-technological conditions of their fabrication and annealing is determined. The model in use accounts the most complete spectrum of defects in chalcogenide, including defects in the cadmium and tellurium sublattices, and the existence of an antistructural defect on the cadmium sublattice. Calculations of the concentration of neutral and charged defects are realized for two extreme cases – full equilibrium and quenching. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/30134
Appears in Collections:	Наукові видання (ЕлІТ)