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Title Calculation of Fermi level location and point defect ensemble in CdTe single crystal and thin films
Authors Kosiak, Volodymyr Volodymyrovych
Opanasiuk, Anatolii Serhiiovych  
ORCID http://orcid.org/0000-0002-1888-3935
Keywords cadmium telluride
point defects
quasichemical formalism
“ab initio” approach
single crystals
thin films
Type Article
Date of Issue 2007
URI http://essuir.sumdu.edu.ua/handle/123456789/30134
Publisher V. Lashkaryov Institute of Semiconductor Physics
License
Citation Kosyak, V.V. Calculation of Fermi level location and point defect ensemble in CdTe single crystal and thin films [Текст] / V.V. Kosyak, A.S. Opanasyuk // Semiconductor Physics, Quantum Electronics & Optoelectronics. – 2007. – V. 10 (3). – P. 95-107.
Abstract With the use of expressions obtained from the “first principles”, the ensemble of point defects was calculated, and the location of a Fermi level in undoped cadmium telluride single crystals and thin films depending on physico-technological conditions of their fabrication and annealing is determined. The model in use accounts the most complete spectrum of defects in chalcogenide, including defects in the cadmium and tellurium sublattices, and the existence of an antistructural defect on the cadmium sublattice. Calculations of the concentration of neutral and charged defects are realized for two extreme cases – full equilibrium and quenching. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/30134
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