Injection and Optical Spectroscopy of Localized States in II-VI Semiconductor Films

Abstract

Novel achievements of nano- and microelectronics are closely connected with working-out of new semiconductor materials. Among them the compounds II-VI (where A = Cd, Zn, Hg and B = О, S, Se, Te) are of special interest. Due to unique physical properties these materials are applicable for design of optical, acoustical, electronic, optoelectronic and nuclear and other devices. First of all the chalcogenide compounds are direct gap semiconductors where the gap value belongs to interval from 0.01 eV (mercury chalcogenides) up to 3.72 eV (ZnS with zinc blende crystalline structure). As potential active elements of optoelectronics they allow overlapping the spectral range from 0.3 mkm to tens mkm if using them as photodetectors and sources of coherent and incoherent light. The crystalline structure of II-VI compounds is cubic and hexagonal without the center of symmetry is a good condition for appearing strong piezoeffect. Crystals with the hexagonal structure have also pyroelectric properties. This feature may be used for designing coustoelectronic devices, amplifiers, active delay lines, detectors, tensile sensors, etc. Large density of some semiconductors (CdTe, ZnTe, CdSe) makes them suitable for detectors of hard radiation. The mutual solubility is also important property of these materials. Their solid solutions give possibility to design new structures with in-advance defined gap value and parameters of the crystalline lattice, transmission region, etc. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/30238