Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/30975
Or use following links to share this resource in social networks: Recommend this item
Title Electrical Characterization of TiO2 Insulator Based Pd / TiO2 / Si MIS Structure Deposited by Sol-Gel Process
Authors Shubham, Kumar
Khan, R.U.
ORCID
Keywords TiO2
Thin film
Sol-Gel
MIS structure
Type Article
Date of Issue 2013
URI http://essuir.sumdu.edu.ua/handle/123456789/30975
Publisher Сумський державний університет
License
Citation Kumar Shubham, R.U. Khan, J. Nano- Electron. Phys. 5 No 1, 01021 (2013)
Abstract Electrical characterization of a Pd / TiO2 / Si MIS structure has been reported in this paper. The TiO2 layer has been deposited on n-Si substrate by spin coating sol-gel process using Titanium Tetraisopropoxide [Ti(OC3H7)4]. The current-voltage and capacitance-voltage characteristics were studied at room temperature (300 K) by applying the dc bias gate voltage swept from – 3 to 3 V for the frequency range of 50 kHz to 1 MHz. The study reveals that the capacitance in the accumulation region has frequency dispersion in high frequencies (> 10 kHz) which is attributed to leakage behavior of TiO2 insulating layer, interface states and oxide defects. Different models of current conduction mechanism have been applied to study the measured data. It is found that Schottky-Richardson (SR) emission model is applicable at low bias voltage, Frenkel-Poole (FP) emission model at moderate bias voltages while Fowler-Nordheim (FN) tunneling dominates at higher bias voltages. TiO2 based MIS devices having high dielectric constant and good interface quality with Si substrate are expected to play a major role in microelectronic applications. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/30975
Appears in Collections: Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

Views

Algeria Algeria
1
Australia Australia
1
Canada Canada
1
China China
711078945
Egypt Egypt
1
France France
269766069
Germany Germany
579777755
Greece Greece
34952064
India India
809691175
Ireland Ireland
1992964773
Japan Japan
-1742638061
Lithuania Lithuania
1
Malaysia Malaysia
83275
Mexico Mexico
1209022089
Portugal Portugal
1258847622
Russia Russia
14
Singapore Singapore
1
South Korea South Korea
1276164618
Sweden Sweden
1
Taiwan Taiwan
-2028915196
Thailand Thailand
389
Turkey Turkey
1197393056
Ukraine Ukraine
168634
United Kingdom United Kingdom
145839
United States United States
860539191
Unknown Country Unknown Country
46685
Vietnam Vietnam
17476032

Downloads

Bulgaria Bulgaria
1
China China
809691178
Egypt Egypt
269766067
France France
1
Germany Germany
3
Greece Greece
1
India India
809691177
Iraq Iraq
1
Japan Japan
579777754
Lithuania Lithuania
1
Malaysia Malaysia
204701
Portugal Portugal
1
Romania Romania
1
Russia Russia
1
Singapore Singapore
1
Taiwan Taiwan
387
Turkey Turkey
1790912884
Ukraine Ukraine
579777753
United Kingdom United Kingdom
401821342
United States United States
-1742638060
Unknown Country Unknown Country
151
Vietnam Vietnam
1

Files

File Size Format Downloads
Shubham K._Thin film.pdf 435.07 kB Adobe PDF -795961949

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.