Pulsed Laser Deposited Nickel Doped Zinc Oxide Thin Films: Structural and Optical Investigations

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Title	Pulsed Laser Deposited Nickel Doped Zinc Oxide Thin Films: Structural and Optical Investigations
Authors	Dar, Tanveer A. Agrawal, Arpana Sen, Pratima
ORCID
Keywords	Semiconductors II–VI semiconductors Doping Exchange interactions
Type	Article
Date of Issue	2013
URI	http://essuir.sumdu.edu.ua/handle/123456789/31018
Publisher	Сумський державний університет
License	Copyright not evaluated
Citation	Tanveer A. Dar, Arpana Agrawal, Pratima Sen, J. Nano- Electron. Phys. 5 No 2, 02024 (2013)
Abstract	Structural and optical studies has been done on Nickel doped Zinc Oxide (NixZn1 – xO, x  0.03, 0.05 and 0.07 by weight) thin films prepared by pulsed laser deposition technique. The films are characterized by X-ray diffraction, Uv-vis spectroscopy, X-ray photoelectron spectroscopy. We observed a slight red shift in the optical band gap in the NiZnO subsequent to Ni doping. This shift can be assigned due to the sp-d exchange interaction of Ni- d states with s and p-states of ZnO. Also X-ray photoelectron spectroscopy studies show that Ni has well substituted in + 2 oxidation state by replacing Zn2+. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/31018
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)