Volatile and Non-Volatile Single Electron Memory

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Title	Volatile and Non-Volatile Single Electron Memory
Authors	Touati, A. Kalboussi, A.
ORCID
Keywords	Single electron memory Multi tunnel junctions Quantum dot memories Write time Retention time SIMON
Type	Article
Date of Issue	2013
URI	http://essuir.sumdu.edu.ua/handle/123456789/31927
Publisher	Сумський державний університет
License	Copyright not evaluated
Citation	A. Touati , A. Kalboussi , J. Nano- Electron. Phys. 5 No 3, 03003 (2013)
Abstract	Multi Tunnel Junctions (MTJs) have attracted much attention recently in the ﬁelds of Single-Electron Devices (SED) in particular Single-Electron Memory (SEM). In this paper, we have design and study a nano-device structure using a two dimensional array MTJs for Volatile and Non-Volatile-SEM, in order to analyze the impact of physical parameters on the performances. We investigate the single-electron circuit characteristics in our devices qualitatively, using single-electron Monte Carlo simulator SIMON. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/31927
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)