Stress Topology within Silicon Single-Crystal Cantilever Beam

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Title	Stress Topology within Silicon Single-Crystal Cantilever Beam
Authors	Kuzmenko, A.P. Timakov, D.I. Abakumov, P.V. Odnodvorets, Larysa Valentynivna Dobromyslov, M.B.
ORCID	http://orcid.org/0000-0002-8112-1933
Keywords	Raman scattering spectroscopy Silicon single-crystal Flexural stresses Mapping of Raman shift distributions
Type	Article
Date of Issue	2013
URI	http://essuir.sumdu.edu.ua/handle/123456789/31972
Publisher	Сумський державний університет
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Citation	A.P. Kuzmenko, D.I. Timakov, P.V. Abakumov, et al., J. Nano- Electron. Phys. 5 No 3, 03024 (2012)
Abstract	Qualitative mechanism in line with experimental data on visualization of the domain structure and fine structure of the domain wall in weak ferromagnets has been proposed. The mechanism is based on the phenomenological consideration of Faraday rotation, optical absorption, and atom polarization in response to the radiation exciting Raman scattering. Qualitative agreement of estimates on the scattered radiation intensity in oppositely- magnetized domains with experimental results is good, which made it possible to attack problems of visualization of magnetic entities with nanoscale resolution. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/31972
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)