Diode Based on Amorphous SiC

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Title	Diode Based on Amorphous SiC
Authors	Zakhvalinskii, V.S. Borisenko, L.V. Aleynikov, A.J. Piljuk, E.A. Goncharov, I. Taran, S.V.
ORCID
Keywords	Atomic force microscopy Transmission electron microscope Silicon carbide Thin films
Type	Article
Date of Issue	2013
URI	http://essuir.sumdu.edu.ua/handle/123456789/33656
Publisher	Сумський державний університет
License	Copyright not evaluated
Citation	V.S. Zakhvalinskii, L.V. Borisenko, A.J. Aleynikov, et al., J. Nano- Electron. Phys. 5 No 4, 04029 (2013)
Abstract	Diode structure on the basis of amorphous silicon carbide and p-type polycrystalline silicon (Eurosolar) were obtained with magnetron RF-nonreactive sputtering method from solid-phase target in argon atmosphere. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/33656
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)