Diode Based on Amorphous SiC

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Title	Diode Based on Amorphous SiC
Authors	Zakhvalinskii, V.S. Borisenko, L.V. Aleynikov, A.J. Piljuk, E.A. Goncharov, I. Taran, S.V.
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Keywords	Atomic force microscopy Transmission electron microscope Silicon carbide Thin films
Type	Article
Date of Issue	2013
URI	http://essuir.sumdu.edu.ua/handle/123456789/33656
Publisher	Сумський державний університет
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Citation	V.S. Zakhvalinskii, L.V. Borisenko, A.J. Aleynikov, et al., J. Nano- Electron. Phys. 5 No 4, 04029 (2013)
Abstract	Diode structure on the basis of amorphous silicon carbide and p-type polycrystalline silicon (Eurosolar) were obtained with magnetron RF-nonreactive sputtering method from solid-phase target in argon atmosphere. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/33656
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)