Piezoelectric Characteristics of LiNbO3 Thin-film Heterostructures via Piezoresponse Force Microscopy

Kiselev, D.A.; Ksenich, S.V.; Zhukov, R.N.; Bykov, A.S.; Malinkovich, M.D.; Shvartsman, V.V.; Lupascu, D.C.; Parkhomenko, Yu.N.

Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/33668

Or use following links to share this resource in social networks: Recommend this item

Title	Piezoelectric Characteristics of LiNbO3 Thin-film Heterostructures via Piezoresponse Force Microscopy
Authors	Kiselev, D.A. Ksenich, S.V. Zhukov, R.N. Bykov, A.S. Malinkovich, M.D. Shvartsman, V.V. Lupascu, D.C. Parkhomenko, Yu.N.
ORCID
Keywords	LiNbO3 thin film Piezoresponse force microscopy Domain structure
Type	Article
Date of Issue	2013
URI	http://essuir.sumdu.edu.ua/handle/123456789/33668
Publisher	Сумський державний університет
License	Copyright not evaluated
Citation	D.A. Kiselev, S.V. Ksenich, R.N. Zhukov, A.S. Bykov, M.D. Malinkovich, V.V. Shvartsman, D.C. Lupascu, Yu.N. Parkhomenko, J. Nano- Electron. Phys. 5 No 4, 04041 (2013)
Abstract	Electro-optic LiNbO3 thin films were deposited on Si(100) and Si(111) substrates using a radio-frequency magnetron sputtering process. The piezoelectric properties of the LiNbO3 films were investigated using the scanning probe microscopy in the piezoresponse mode. The obtained results show the high degree of grains orientation in polycrystalline structure. The piezoelectric modulus (dzz) was estimated to be 16 pm/V (for LiNbO3 / Si(100)) and 22 pm/V (for LiNbO3 / Si(111)) and the polarization about of 0.37 C·m – 2. These values are larger than those reported previously for LiNbO3 films. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/33668
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)