Optical Losses of Thin Solar Cells on the Basis of n-ZnS / p-CdTe and n-CdS / p-CdTe Heterojunctions

Dobrozhan, Oleksandr Anatoliiovych; Dobrozhan, Oleksandr Anatoliyovych; Berestok, Taisiia Oleksandrivna; Kurbatov, Denys Ihorovych; Opanasiuk, Anatolii Serhiiovych; Opanasiuk, Nadiia Mykolaivna; Nefedchenko, Vasyl Fedorovych

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Title	Optical Losses of Thin Solar Cells on the Basis of n-ZnS / p-CdTe and n-CdS / p-CdTe Heterojunctions
Authors	Dobrozhan, Oleksandr Anatoliiovych Dobrozhan, Oleksandr Anatoliyovych Berestok, Taisiia Oleksandrivna Kurbatov, Denys Ihorovych Opanasiuk, Anatolii Serhiiovych Opanasiuk, Nadiia Mykolaivna Nefedchenko, Vasyl Fedorovych
ORCID	http://orcid.org/0000-0001-9238-7596 http://orcid.org/0000-0002-2754-6367 http://orcid.org/0000-0002-1888-3935 http://orcid.org/0000-0002-3698-3788
Keywords	CdS / CdTe heterojunction ZnS / CdTe heterojunction Optical losses Reflection coefficient Transmittance Absorption coefficient
Type	Conference Papers
Date of Issue	2013
URI	http://essuir.sumdu.edu.ua/handle/123456789/33898
Publisher	Sumy State University Publishing
License	Copyright not evaluated
Citation	Optical Losses of Thin Solar Cells on the Basis of n-ZnS / p-CdTe and n-CdS / p-CdTe Heterojunctions [Текст] / O.A. Dobrozhan, T.O. Berestok, D.I. Kurbatov, A.S. Opanasyuk, N.M. Opanasyuk, V.F. Nefedchenko // 3rd International Conference “Nanomaterials: Applications & Properties - 2013 (NAP-2013)”. – Alushta, the Crimea, Ukraine, 2013. — С. 04NEA16-1.
Abstract	The optical reflection and absorption losses in the accessory layers of solar cells based on n-ZnS / p- CdTe and n-CdS / p-CdTe heterojunctions are defined in this work. Aluminum doped zinc oxide is used as the front conductive layer material. It is shown that the replacement of traditional window material (CdS) for a wide-one (ZnS) leads to an increase in accessory solar cells layers transmittance. When the thickness of the window layers is 50 nm, the transmittance using ZnS windows with the wavelength of 380-500 nm is higher in 7-40 % than the corresponding value for CdS. At 300 nm for the same spectral field the difference increases to 8-89 %. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/33898
Appears in Collections:	Наукові видання (ЕлІТ)