Injection Spectroscopy of Deep Traps in Nanostructured Films of Cadmium Sulfide

Гринько, Д.О.; Гринько, Д.О.; Grynko, D.O.; Дмитриев, О.П.; Дмитриев, О.П.; Dimitriev, O.P.; Смертенко, П.С.; Смертенко, П.С.; Smertenko, P.S.; Федоряк, O.M.; Федоряк, O.M.; Fedoryak, O.M.; Opanasiuk, Anatolii Serhiiovych; Tyrkusova, Nadiia Volodymyrivna; Носков, Ю.В.; Носков, Ю.В.; Noskov, Yu.V.; Огурцов, Н.А.; Огурцов, Н.А.; Ogurtsov, N. A.; Пуд, A.A.; Пуд, A.A.; Pud, A.A.

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Title	Injection Spectroscopy of Deep Traps in Nanostructured Films of Cadmium Sulfide
Authors	Гринько, Д.О. Гринько, Д.О. Grynko, D.O. Дмитриев, О.П. Дмитриев, О.П. Dimitriev, O.P. Смертенко, П.С. Смертенко, П.С. Smertenko, P.S. Федоряк, O.M. Федоряк, O.M. Fedoryak, O.M. Opanasiuk, Anatolii Serhiiovych Tyrkusova, Nadiia Volodymyrivna Носков, Ю.В. Носков, Ю.В. Noskov, Yu.V. Огурцов, Н.А. Огурцов, Н.А. Ogurtsov, N. A. Пуд, A.A. Пуд, A.A. Pud, A.A.
ORCID	http://orcid.org/0000-0002-1888-3935 http://orcid.org/0000-0002-3248-0067
Keywords	CdS film Nanostructured layer Current-voltage characteristic Differential approach Injection spectroscopy Trap
Type	Conference Papers
Date of Issue	2013
URI	http://essuir.sumdu.edu.ua/handle/123456789/33901
Publisher	Sumy State University Publishing
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Citation	Injection Spectroscopy of Deep Traps in Nanostructured Films of Cadmium Sulfide [Текст] / D.O. Grynko, O.P.Dimitriev, P.S. Smertenko, O.M. Fedoryak, А.S. Оpanasyuk, N.V. Тirkusova, Yu.V.Noskov, N. A. Ogurtsov, A.A. Pud // 3rd International Conference “Nanomaterials: Applications & Properties - 2013 (NAP-2013)”. – Alushta, the Crimea, Ukraine, 2013. — С. 01NTF41-1.
Abstract	Nanocrystallin CdS films with controlled stoichiometry deposited by CSVS were investigated by meth- od of the current-voltage characteristics in ITO/CdS /In structures. It was shown that in the case of cadmi- um excess (S Cd) charge flow mechanism is deter- mined by monomolecular recombination. In the band gap of CdS with excess of cadmium there was detected localized states with energy Et = 0.514 ± 0.026 eV, while in the material with Excess sulfur there are two localized states with energy Et1 = 0.514 ± 0.026 eV and Et2 = 0.700 ± 0.026 eV. Full concentration of localized states is more than 2·1021 m-3 – 5·1022 m-3. Dependence of injection in parameters and nature of injection in the structures based on nanostructured CdS films on their stoichiometry was determined. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/33901
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