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Title Changing of defect’s structure and properties of superhard nanostructured Ti-Si-N coatings, fabricated using CPVD, before and after annealing
Authors Pohrebniak, Oleksandr Dmytrovych  
Bondar, Oleksandr Viacheslavovych  
Bondarenko, Oleksandr Viacheslavovych
Соболь, О.В.
Sobol, O.V.
Береснев, В.М.
Beresnev, V.M.
ORCID http://orcid.org/0000-0002-9218-6492
http://orcid.org/0000-0003-3174-0709
Keywords Nanostructure
Wear
Nanohardness
Profiles of Defects
Ti-Si-N
Type Article
Date of Issue 2013
URI http://essuir.sumdu.edu.ua/handle/123456789/33948
Publisher Scientific Research
License
Citation Changing of defect’s structure and properties of superhard nanostructured Ti-Si-N coatings, fabricated using CPVD, before and after annealing [Текст] / O.D. Pohrebniak, O.V. Bondar, O.V. Sobol, V.M. Beresnev // Soft Nanoscience Letters. — 2013. — №3. — P. 46-51
Abstract Using such unique methods of analysis as slow positron beam (SPB), RBS, μ-PIXE (proton microbeam), XRD, SEM with EDS, XPS, nanohardness and elastic modulus measurements, we studied superhard nanostructure Ti-Si-N coatings, which were deposited using Cathodic-PVD method, before and after annealing at the temperature of 600°C for 30 minutes. It is shown in the paper that redistribution of N and Si occurs on the borders of nanograins after annealing, amorphous phase α-SiNx (Si3N4) is created, defects segregates on interfaces and forms vacancy-type clusters with rather high concentration from 5 × 10[16] cm-3 to 7.5 × 10[17] cm-3 due to thermodiffusion. Solid solution (Ti,Si)N and small concentration of α-SiN (close to XRD detection limits) are formed in the coating. Also it was obtained, that deflected mode is formed in the coating (compressive deformation equals to –2.6%), but after thermal annealing deformation reduces to a value of -2.3%. Size of nanograins of solid solution (Ti, Si)N increases from 12.5 nm to (13.2 ÷ 13.4) nm. 25 nm size grains increase their size to 28.5 nm after annealing (under another deposition regime). When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/33948
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