Mott–Schottky Analysis of SnO2 Nanoparticles by Impedance Measurements  underUltrahigh Pressure

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Title	Mott–Schottky Analysis of SnO2 Nanoparticles by Impedance Measurements underUltrahigh Pressure
Authors	Chenari, H.M.
ORCID
Keywords	SnO2 Nanoparticles Mott-Schottky Impedance Spectroscopy
Type	Conference Papers
Date of Issue	2012
URI	http://essuir.sumdu.edu.ua/handle/123456789/34827
Publisher	Sumy State University
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Citation	Chenari, H.M. Mott–Schottky Analysis of SnO2 Nanoparticles by Impedance Measurements underUltrahigh Pressure [Текст] / H.M. Chenari // Nanomaterials: Applications & Properties (NAP-2012) : 2-nd International conference, Alushta, the Crimea, September 17-22, 2012 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2012. - V.1, No1. - 01PCN13
Abstract	In this study, the SnO2 nanoparticle powders were compacted into a disk shape form of under a ultrahigh pressure up to 49.6 GPa. Complex impedance analysis of nano-SnO2 thick film/electrode system was studied as a function of applied potential. A calculated Mott– Schottky plot for the film is presented. Both flat-band potential and donor concentration were estimated from the space charge capacitance at a definite frequency. The film can be described as an n-type semiconductor with a high concentration of donors. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/34827
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