Properties of GaN Films Obtained by Nitridation of Porous GaP (001)

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Title	Properties of GaN Films Obtained by Nitridation of Porous GaP (001)
Authors	Zbyryn, E.M.
ORCID
Keywords	Nitridation of Porous GaP Films of Cubic-GaN XPS Spectra
Type	Conference Papers
Date of Issue	2012
URI	http://essuir.sumdu.edu.ua/handle/123456789/34882
Publisher	Sumy State University
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Citation	Zburyn, E. M. Properties of GaN Films Obtained by Nitridation of Porous GaP (001) / E. M. Zburyn // Nanomaterials: Applications & Properties (NAP-2012) : 2-nd International conference, Alushta, the Crimea, September 17-22, 2012 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2012. - V. 1, No2. - 02NFC16-02NFC16
Abstract	With the help of nitridation of porous GaP (001) in nitrogen plasma thin films of cubic-GaN were obtained. The conclusion was made that the quality of the GaN films is dependent on the degree of porosity of the GaP substrate. XPS spectra were used to investigate the chemical composition of porous GaP substrates, obtained by electrochemical etching. From XPS measurement we determined that the annealing in atomic nitrogen leads to the formation of GaN films. X-ray diffraction measurements show that cubic GaN on porous GaP substrate has no tensile strain When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/34882
Appears in Collections:	Наукові видання (ЕлІТ)